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Engineering of optical and electronic band gaps in transition metal dichalcogenide monolayers through external dielectric screening
2017
PHYSICAL REVIEW MATERIALS
In order to fully exploit the potential of transition metal dichalcogenide monolayers (TMD-MLs), the well-controlled creation of atomically sharp lateral heterojunctions within these materials is highly desirable. A promising approach to create such heterojunctions is the local modulation of the electronic structure of an intrinsic TMD-ML via dielectric screening induced by its surrounding materials. For the realization of this non-invasive approach, an in-depth understanding of such dielectric
doi:10.1103/physrevmaterials.1.054001
fatcat:w6njsqqs6jdcpbqfrwvj4kiexy