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Carrier relaxation dynamics and steady-state charge distributions in coupled InGaN∕GaN multiple and single quantum wells
Journal of Applied Physics
We have examined the carrier capture dynamics and excitation dependent charge distributions of coupled InGaN/ GaN multiple quantum well samples. We measured the temporal evolution of time-delayed cathodoluminescence ͑CL͒ spectra to study the temperature-and excitation-dependent transfer of carriers from a surrounding confinement region into a coupled single quantum well. Samples possessing two different structures for the confinement region ͓i.e., number of quantum wells ͑QWs͒ and varyingdoi:10.1063/1.2727437 fatcat:sd5ag3qdfbc7xotkbxk55dghoe