Role of group V exchange on the shape and size of InAs/InP self-assembled nanostructures

H. R. Gutiérrez, M. A. Cotta, J. R. R. Bortoleto, M. M. G. de Carvalho
2002 Journal of Applied Physics  
Self-assembled InAs quantum dots formed by molecular beam epitaxy at low temperature and postgrowth annealing Chemical beam epitaxy growth of self-assembled InAs/InP quantum dots Structural and photoluminescence properties of In 0.9 (Ga/Al) 0.1 As self-assembled quantum dots on InP substrate
doi:10.1063/1.1524014 fatcat:xxxlnou4bjh6nbdehgtf5zcqke