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Optimization of high-speed SiGe HBTs
2001 International Symposium on Electron Devices for Microwave and Optoelectronic Applications. EDMO 2001 (Cat. No.01TH8567)
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We present a methodology for characterization and optimization of SiGe HBTs from our 0.8 µm BiC-MOS technology. It involves process calibration, device calibration employing two-dimensional device simulation, and automated Technology Computer Aided Design (TCAD) optimization. The simulation results show a very good agreement with experimental data. In particular, we perform an optimization of collector doping for specific requirements (high speed or high breakdown voltage). 0-7803-7049-X /01/$10.00 c 2001 IEEE.
doi:10.1109/edmo.2001.974305
fatcat:wcps54urtvd3dmkqxugpljxiqe