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Radial tunnel diodes based on InP/InGaAs core-shell nanowires
Applied Physics Letters
We report on the fabrication and characterization of radial tunnel diodes based on InP(nþ)/ InGaAs(pþ) core-shell nanowires, where the effect of Zn-dopant precursor flow on the electrical properties of the devices is evaluated. Selective and local etching of the InGaAs shell is employed to access the nanowire core in the contact process. Devices with an n þ -p doping profile show normal diode rectification, whereas n þ -p þ junctions exhibit typical tunnel diode characteristics withdoi:10.1063/1.4978271 fatcat:p3fwdhc655g7hec45xmpcquyra