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Band discontinuities: a simple electrochemical approach
IEEE Transactions on Electron Devices
A new, simple but general analytic description of the band discontinuities at a semiconductor heterojunction is derived from the fundamental electrochemical principle. We include the effects of nonuniform band structure and carrier degeneracy (Fermi-Dirac statistics), dielectric image forces, quantum-mechanical exchange-correlation forces, and dipole forces across the interface. These nonideal effects (band model parameters) are expressed in terms of the activity coefficients (thermodynamicdoi:10.1109/16.52421 fatcat:x3hcvrtjjfhz7g2jdo5iq5lac4