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SN Applied Sciences
This paper presents an innovative reliability bench of aging life tests designed to high power RF applications for device lifetime under pulse conditions. The temperature effect on the parameters of power RF LDMOS (Radio Frequency Laterally Diffused-Metal-Oxide-Semiconductor) devices is highlighted. Indeed, the acceleration of the degradation mechanisms is related, directly or indirectly, to the temperature variation. The tests carried out on the power amplifier will be "Life-test RF" typedoi:10.1007/s42452-020-2708-1 fatcat:fs3w6rba2fhqlkh5nd7ewd2wmm