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We report a synthesis of single-crystal  oriented selenium nanobelts (SeNBs) through a simple vacuum evaporation at 250 C. The width and thickness of the SeNBs are in the range of 100-800 nm and 20-90 nm, respectively. I-V analysis of an individual SeNB based field effect transistor (FET) reveals typical p-type electrical conduction. The hole mobility and concentration are respectively estimated to 0.63 cm 2 (V s) À1 and 9.35 Â 10 16 cm À3 . The p-type electrical characteristics can bedoi:10.1039/c2ce06420k fatcat:zo23y4rsvzfmfn7zgqaxbsd4ie