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An electron cyclotron resonance ͑ECR͒ plasma has been used in conjunction with solid metal targets for deposition of various metal and oxide compounds. A large microwave system provides dense and high-quality films at low gas pressures with a plasma generation independent on the sputtering process. The 2.45 GHz microwave power is introduced in the reactor via two separate rectangular waveguides and the plasma cross section is 20ϫ5 cm 2 in area. High plasma densities over 4 ϫ10 11 cm Ϫ3 weredoi:10.1063/1.1148938 fatcat:zu2xvpt5gzg4nhwfn2djm633ky