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Heteroepitaxial Growth of III-V Semiconductors on Silicon
2020
Crystals
Monolithic integration of III-V semiconductor devices on Silicon (Si) has long been of great interest in photonic integrated circuits (PICs), as well as traditional integrated circuits (ICs), since it provides enormous potential benefits, including versatile functionality, low-cost, large-area production, and dense integration. However, the material dissimilarity between III-V and Si, such as lattice constant, coefficient of thermal expansion, and polarity, introduces a high density of various
doi:10.3390/cryst10121163
fatcat:meagj6sj4fgnzpwib335bnhmke