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2010 International Conference on Simulation of Semiconductor Processes and Devices
We discuss an intriguing set of transport and noise properties of graphene-based transistors that can be investigated in a direct way with atomistic modeling -Non-Equilibrium Green's Functions with a Tight-Binding Hamiltonian -and are not directly accessible with models based on a higher level of physical abstraction. We present an investigation of the achievable electron mobility in channels based on graphene nanoribbons with realistic imperfections. Then, we will discuss how the small gap anddoi:10.1109/sispad.2010.5604587 fatcat:sofhj33knfc5xcf2gccvrbiifi