A Millimeter-Wave Linear Low Noise Amplifier in SiGe HBT Technology with Substrate Parasitic Model

Anand Raghavan, Umesh Jalan, Sudipto Chakraborty, Chang-Ho Lee, Joy Laskar, Emery Chen, Jongsoo Lee, John Cressler, Greg Freeman, Alvin Joseph
unpublished
This paper outlines the design and implementation of a monolithic millimeter-wave low noise amplifier (LNA) fabricated in a 200 GHz SiGe HBT technology. A simple analytical model of electromagnetic and substrate parasitic effects inherent at millimeter-wave frequencies is also included. A measured gain of 13.3 dB at 45 GHz, with an associated 3 dB bandwidth of 6.7 GHz, i s exhibited by the LNA, along with a noise figure of 4.5 dB. The LNA provides linear performance with an IIP 3 of-8 dBm and
more » ... IP 3 of-8 dBm and it dissipates 18 mW.
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