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Dislocation density reduction during impurity gettering in multicrystalline silicon
2013
2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2
Isothermal annealing above 1250 • C has been reported to reduce the dislocation density in multicrystalline silicon (mc-Si), presumably by pairwise dislocation annihilation. However, this high-temperature process may also cause significant impurity contamination, canceling out the positive effect of dislocation density reduction on cell performance. Here, efforts are made to annihilate dislocations in mc-Si in temperatures as low as 820 • C, with the assistance of an additional driving force to
doi:10.1109/pvsc-vol2.2013.6656733
fatcat:6jo4lqqv5zdhpbc2vqbuzj7w2e