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Assessing the role of trap-to-band impact ionization and hole transport on the dark currents of 4H-SiC photoconductive switches containing deep defects

A. R. Chowdhury, J. C. Dickens, A. A. Neuber, R. P. Joshi
2016 Journal of Applied Physics  

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doi:10.1063/1.4972968 fatcat:sajpqz7mezfv3lxhwhqsaxkqyy
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A. R. Chowdhury, J. C. Dickens, A. A. Neuber, R. P. Joshi. "Assessing the role of trap-to-band impact ionization and hole transport on the dark currents of 4H-SiC photoconductive switches containing deep defects." Journal of Applied Physics 120.24 (2016) 245705