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Preparation of TiN Films by Ion Mixing and Vapor Deposition Technique and Their Pinhole Defect Evaluation
イオンミキシング蒸着法によるTiN薄膜の作製とピンホール欠陥評価
2002
Journal of the Society of Materials Science Japan
イオンミキシング蒸着法によるTiN薄膜の作製とピンホール欠陥評価
Titanium nitride (TiN) films for a wide range of applications were prepared by nitrogen ion irradiation with 2keV during titanium vapor deposition, i.e., ion mixing and vapor deposition technique. The TiN films deposited onto stainless steels exhibited the columnar structure with the preferential crystal growth of (111) or (200) plane, and they contained more or less pinhole defects. Pinhole defects of TiN films were evaluated potentiodynamically in a deaerated 0.5kmol/m3H2S4+0.05kmol/m3KSCN
doi:10.2472/jsms.51.107
fatcat:vpaugkl57bgnfg5w37friwvqcq