Fast silicon carbide MOSFET based high-voltage push–pull switch for charge state separation of highly charged ions with a Bradbury–Nielsen gate

Christoph Schweiger, Menno Door, Pavel Filianin, Jost Herkenhoff, Kathrin Kromer, Daniel Lange, Domenik Marschall, Alexander Rischka, Thomas Wagner, Sergey Eliseev, Klaus Blaum
2022 Review of Scientific Instruments  
In this paper, we report on the development of a fast high-voltage switch, which is based on two enhancement mode N-channel silicon carbide metal–oxide–semiconductor field-effect transistors in push–pull configuration. The switch is capable of switching high voltages up to 600 V on capacitive loads with rise and fall times on the order of 10 ns and pulse widths ≥20 ns. Using this switch, it was demonstrated that, from the charge state distribution of bunches of highly charged ions ejected from
more » ... n electron beam ion trap with a specific kinetic energy, single charge states can be separated by fast switching of the high voltage applied to a Bradbury–Nielsen Gate with a resolving power of about 100.
doi:10.1063/5.0083515 pmid:36182519 fatcat:mwzo6gatefaenn6iehw4vtcbyi