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We report on the formation of graphitized carbon on GaAs͑100͒ surfaces by molecular beam epitaxy. We grew highly carbon-doped GaAs on AlAs, which was then thermally etched in situ leaving behind carbon atoms on the surface. After thermal etching, Raman spectra revealed characteristic phonon modes for sp 2 -bonded carbon, consistent with the formation of graphitic crystallites. We estimate that the graphitic crystallites are 1.5-3 nm in size and demonstrate that crystallite domain size can bedoi:10.1063/1.3555442 fatcat:gvlvtp6sgfdaxpyci7jbixyiwa