A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2017; you can also visit the original URL.
The file type is
A new technique for manufacturing double-sided structured Si(Li) detectors has been established. The position-sensitive structure on the implanted p + -contact can be made smaller than 100 m by photolithography followed by plasma etching of grooves to separate the position elements. By modifying this technique position-sensitive structures on a thin ( 30 m) Li-diffused contact were created. Areas of 50 mm 50 mm were divided into 50 or 100 strips with a pitch of 1 mm or 500 m, respectively. Thedoi:10.1109/tns.2002.801541 fatcat:3ys2jokb7fh3vkykxits3iqbvu