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Defect production in collision cascades in elemental semiconductors and fcc metals
1998
Physical Review B (Condensed Matter)
A comparative molecular dynamics simulation study of collision cascades in two elemental semiconductors and five fcc metals is performed to elucidate how different material characteristics affect primary defect production during ion irradiation. By using simulations of full 400 eV-10 keV collision cascades and contrasting the results on different materials with each other, we probe the effect of the mass, melting temperature, material strength, and crystal structure on the modification of the
doi:10.1103/physrevb.57.7556
fatcat:m3bkreblerbzjcnijxpaq6lwym