Test of the scaling theory in two dimensions in the presence of valley splitting and intervalley scattering in Si-MOSFETs

Alexander Punnoose, Alexander M. Finkel'stein, A. Mokashi, S. V. Kravchenko
2010 Physical Review B  
We show that once the effects of valley splitting and intervalley scattering are incorporated, renormalization group theory consistently describes the metallic phase in silicon metal-oxide-semiconductor field-effect transistors down to the lowest accessible temperatures.
doi:10.1103/physrevb.82.201308 fatcat:wwvdcjhxknbq5icqqnbo4s4pc4