Depth profiling of vacancy clusters in MeV-implanted Si using Au labeling

V. C. Venezia, D. J. Eaglesham, T. E. Haynes, Aditya Agarwal, D. C. Jacobson, H.-J. Gossmann, F. H. Baumann
1998 Applied Physics Letters  
Mechanism for the reduction of interstitial supersaturations in medium-energy ion-implanted silicon following MeV co-implantation," App. Phys. Lett. 74, 1299Lett. 74, (1999.
doi:10.1063/1.122650 fatcat:j2csag3f7bdu5nngzwtnh2xzom