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Depth profiling of vacancy clusters in MeV-implanted Si using Au labeling
1998
Applied Physics Letters
Mechanism for the reduction of interstitial supersaturations in medium-energy ion-implanted silicon following MeV co-implantation," App. Phys. Lett. 74, 1299Lett. 74, (1999.
doi:10.1063/1.122650
fatcat:j2csag3f7bdu5nngzwtnh2xzom