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Determination of the branch-point energy of InN: Chemical trends in common-cation and common-anion semiconductors
2008
Physical Review B
Preserved Fulltext
Bulk and surface electronic properties of Si-doped InN are investigated using high-resolution x-ray photoemission spectroscopy, optical absorption spectroscopy, and quasiparticle corrected density functional theory calculations. The branch point energy in InN is experimentally determined to lie 1.83± 0.10 eV above the valence-band maximum. This high position relative to the band edges is used to explain the extreme fundamental electronic properties of the material. Far from being anomalous,
doi:10.1103/physrevb.77.045316
fatcat:hy6n7filingurdwubaywjgf7ue