A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2017; you can also visit the original URL.
The file type is
The radioactive tracer technique was applied to investigate the migration and adsorption behaviors of metallic impurities (i.e., Ba, Cs, Zn, and Mn) out of chemically amplified photoresist onto silicon-based underlying substrates. Two important process parameters, i.e., baking temperatures and substrate types (e.g., bare silicon, polysilicon, oxide, and nitride) were evaluated. Our results indicated that the transition metals (Zn and Mn) have lower migration ratios than alkali metal (Cs) anddoi:10.1149/1.1393985 fatcat:2rqrsdp7yfhefb2xxktlruk3my