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Physical Review B
A systematic study of the level positions of intrinsic and carbon defects in SiO 2 is presented, based on density functional calculations with a hybrid functional in an ␣-quartz supercell. The results are analyzed from the point of view of the near interface traps ͑NIT͒, observed in both SiC/ SiO 2 and Si/ SiO 2 systems, and assumed to have their origins in the oxide. It is shown that the vacancies and the oxygen interstitial can be excluded as the origin of such NIT, while the silicondoi:10.1103/physrevb.72.115323 fatcat:ez5pdym76rfuvjbivet6vszd4q