Transport simulation of a nanoscale silicon rod field-effect transistor

C. Dwyer, R. Taylor, L. Vicci
Proceedings of the 2nd IEEE Conference on Nanotechnology  
We have simulated the behavior of a rod shaped nanoscale ring-gated field-effect transistor (O-FET) using the PISCES-IIb[1] semiconductor drift-diffusion solver. The results from these simulations are used by a custom SPICE 3f5[2] kernel to simulate several simple logic gates. The usefulness of this kind of transistor is examined within the context of a self-assembling fabrication technique that we outline. We also briefly explore a computer architecture we call a "computational oracle" for
more » ... h the O-FET is well suited. Our simulation results, SPICE kernel modifications, and input decks may be found at ftp://ftp.cs.unc.edu/pub/packages/GRIP/publication_addenda /TSNSRFET.
doi:10.1109/nano.2002.1032275 fatcat:c3wfx5pjsbanhhrq6l6g2s7c4i