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Ge/SiGe quantum wells on Si(111): Growth, structural, and optical properties
2014
Journal of Applied Physics
Preserved Fulltext
Above-room-temperature photoluminescence from a strain-compensated Ge/Si0.15Ge0.85 multiple-quantumwell structure Appl. Phys. Lett. 100, 141905 (2012); 10.1063/1.3700804 Room temperature photoluminescence of tensile-strained Ge / Si 0.13 Ge 0.87 quantum wells grown on siliconbased germanium virtual substrate
doi:10.1063/1.4891463
fatcat:cqz224qidrcvdaljrxzbxsboz4