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1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)
We report on the metal-organic chemical vafir deposition (MOCVD) of mid-infrared InAaSb multistage emitters using a hlgb speed rotating dkk reactor. The devices contain AIAsSb ctaddi~and almined InAaSb active regions. These emitters have multistage, type~InAsSb/inAaP quantum well active regions. A semi-metal GaAaSbfh4.v layer acts as an internal electron source for the multistage injection lasers and AIAsSb is tbe electron confinement layer. These structures are #e first MOCVD multistagedoi:10.1109/commad.1998.791582 fatcat:wevozb3yhrbedgkvpc5ukiykbi