Spin Degree of Freedom in a Two-Dimensional Electron Liquid

Tohru Okamoto, Kunio Hosoya, Shinji Kawaji, Atsuo Yagi
1999 Physical Review Letters  
We have investigated correlation between spin polarization and magnetotransport in a high mobility silicon inversion layer which shows the metal-insulator transition. Increase in the resistivity in a parallel magnetic field reaches saturation at the critical field for the full polarization evaluated from an analysis of low-field Shubnikov-de Haas oscillations. By rotating the sample at various total strength of the magnetic field, we found that the normal component of the magnetic field at
more » ... a in the diagonal resistivity increases linearly with the concentration of "spin-up" electrons.
doi:10.1103/physrevlett.82.3875 fatcat:6y2wi2bo6ra6leb3fhjkb3sszy