LUMINESCENCE CHARACTERIZATION OF GaAs SINGLE QUANTUM WELLS

R. MITDANK, H. HAEFNER, E. SCHULZE, G. OELGART
1991 Journal de Physique IV : Proceedings  
The peculiarities of the photo-and cathodoluminescence of MOVPE grown single quantum wells containing impurities are investigated. The investigations reveal monolayerfluctuations with a lateral extension of about 10 pm. The incorporation of carbon in the thicker islands is shown using micrographs of spectrally resolved cathodoluminescence. Extrinsic radiative transitions involving the impurities are found also in the barrier above that islands which contain impurities. These inhomogenities are
more » ... inhomogenities are proposed to be connected with dislocations emanating from the substrate and penetrating the sandwiched layer structure. Article published online by EDP Sciences and available at http://dx.
doi:10.1051/jp4:1991623 fatcat:bcbmajlqkbc4rmyxr3xw4j3zqa