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GaSb AND GaInAsSb PHOTODETECTORS FOR λ > 1.55 µm PREPARED BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION
1988
Le Journal de Physique Colloques
~6 s u r n 6 -Des couches de GaSb de type p e t n ont 6t6 e l a b o r i e s par d6pBt e n phase vapeur i partir d'organom6talliques (MOCVD) sur des substrats d e GaSb et d e GaAs semi-isolant ; 15 l e s plus faibles niveaux d e dopage obtenus sont"p = 2 x 1 0 '~c m -~, n = 8 x 10 ~m -~. Des couches d e G a l~x I n x A~v S b l~v d e type p o n t aussi et6 fabriqu6es par c e t t e mithode a v e c une composition assurant l a photod6tection i 2.5pm. Les propriitCs des couches et des jonctions
doi:10.1051/jphyscol:1988470
fatcat:xqpg72m6jjgwti35vvellazpl4