22aWA-1 Surface diffusion of SiC by the first principles calculation
22aWA-1 SiC表面拡散の第一原理計算(22aWA 格子欠陥・ナノ構造(シミュレーション),領域10(誘電体,格子欠陥,X線・粒子線,フォノン物性))

Y. Yamamoto, K. Terai, S. R. Nishitani, T. Kaneko, N. Ohtani
2008 Meeting Abstracts of the Physical Society of Japan (Nihon Butsuri Gakkai koen gaiyoshu)  
doi:10.11316/jpsgaiyo.63.2.4.0_885_1 fatcat:4jwhnj2sqjh5vpmazmyrc7ge2y