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Front side metallization of crystalline silicon solar cells using selectively laser drilled contact openings
2009 34th IEEE Photovoltaic Specialists Conference (PVSC)
Selective removal of the silicon nitride dielectric layer has been demonstrated even using nanosecond range laser pulses, through carefully controlling the energy density of laser pulses. It has been found that, a laser pulse with a peak energy density of 4.3 J/cm 2 or lower can remove the nitride layer without altering the underlying silicon while a pulse with a peak energy density of 4.8 J/cm 2 or higher will substantially damage the silicon. With the laser energy density maintained below thedoi:10.1109/pvsc.2009.5411630 fatcat:c7gfxkvbeve63gf42pehzybpbi