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Hydrogen-desorption kinetic measurement on the Si(100)-2×1:H surface by directly counting desorption sites
1999
Physical Review B (Condensed Matter)
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The desorption kinetics of hydrogen from the Si͑100͒-2ϫ1:H monohydride surface was investigated by means of variable-temperature scanning-tunneling microscopy ͑STM͒ in the temperature range between 590 and 668 K. By directly counting the number of desorption sites in the STM images for various annealing time at several temperatures, an activation barrier of E d ϭ2.22Ϯ0.20 eV and a pre-exponential factor of d ϭ3.4 ϫ10 13Ϯ0.3 s Ϫ1 for the H 2 recombinative desorption are deduced. The sequential
doi:10.1103/physrevb.60.r8461
fatcat:t25odz4xera2lnuzhuk4fp7rme