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Smoothing of Si0.7Ge0.3 virtual substrates by gas-cluster-ion beam
Applied Physics Letters
The planarization of the SiGe virtual substrate surface is crucial for the fabrication of high-performance strained-Si metal-oxide-semiconductor field-effect transistors. In this letter, we report on the smoothing of the inherently crosshatched rough surfaces of SiGe deposited by molecular beam epitaxy on Si substrates by gas cluster ion beams. Atomic force microscopy measurements show that the average surface roughness ͑R a ͒ of the SiGe layer could be reduced considerably from 3.2 to 0.7 nmdoi:10.1063/1.2041829 fatcat:u4olont4wnamxn5ukbdlrbb7wu