Laser infrared photocarrier radiometry ͑PCR͒ was used with a harmonically modulated low-power laser pump and a superposed dc superband-gap optical bias ͑a secondary laser beam͒ to control and monitor the space-charge-layer ͑SCL͒ width in oxidized p-Si-SiO 2 and n-Si-SiO 2 interfaces ͑wafers͒ exhibiting charged interface-state related band bending. Applying the theory of PCR-SCL dynamics ͓A. Mandelis, J. Appl. Phys. 97, 083508 ͑2005͔͒ to the experiments yielded various transport parameters of

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... samples as well as depth profiles of the SCL exhibiting complete ͑ p-type Si͒ or partial ͑n-type Si͒ band flattening, to a degree controlled by widely different minority-carrier capture cross section at each interface. The uncompensated charge density at the interface was also calculated from the theory.