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Electronic transport mechanisms in scaled gate-all-around silicon nanowire transistor arrays Appl. Phys. Lett. 103, 263504 (2013); 10.1063/1.4858955 Study of individual phonon scattering mechanisms and the validity of Matthiessen's rule in a gate-all-around silicon nanowire transistor Characteristics of gate-all-around silicon nanowire field effect transistors with asymmetric channel width and source/drain doping concentration J. Appl. Phys. 112, 034513 (2012); 10.1063/1.4745858 Randomdoi:10.1063/1.4914976 fatcat:4os3rxavlvh5tejaut22hhgjfu