Statistical variability study of random dopant fluctuation on gate-all-around inversion-mode silicon nanowire field-effect transistors

Jun-Sik Yoon, Taiuk Rim, Jungsik Kim, Kihyun Kim, Chang-Ki Baek, Yoon-Ha Jeong
2015 Applied Physics Letters  
Electronic transport mechanisms in scaled gate-all-around silicon nanowire transistor arrays Appl. Phys. Lett. 103, 263504 (2013); 10.1063/1.4858955 Study of individual phonon scattering mechanisms and the validity of Matthiessen's rule in a gate-all-around silicon nanowire transistor Characteristics of gate-all-around silicon nanowire field effect transistors with asymmetric channel width and source/drain doping concentration J. Appl. Phys. 112, 034513 (2012); 10.1063/1.4745858 Random
more » ... signal noise in gate-all-around silicon nanowire transistors featuring Coulomb-blockade characteristics Appl. Phys. Lett. 94, 083503 (2009);
doi:10.1063/1.4914976 fatcat:4os3rxavlvh5tejaut22hhgjfu