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Effect of boron concentration on recombination at the p-Si–Al2O3 interface
Journal of Applied Physics
Articles you may be interested in Deposition temperature independent excellent passivation of highly boron doped silicon emitters by thermal atomic layer deposited Al2O3 We examine the surface passivation properties of Al 2 O 3 deposited on boron-doped planar h100i crystalline silicon surfaces as a function of the boron concentration. Both uniformly doped and diffused surfaces are studied, with surface boron concentrations ranging from 9.2 Â 10 15 to 5.2 Â 10 19 cm À3 . Atmospheric pressuredoi:10.1063/1.4867643 fatcat:pekjt4negvdwbjruzjsalkr4j4