A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2008; you can also visit the original URL.
The file type is
The current level in the modern high-speed SiGe heterojunction bipolar transistors (HBTs) continues to increase for operation speed enhancement, but the resultant self-heating and elevated junction temperature emerge as a growing concern for device reliability as well as performance. To address such thermal issues, the optimization of SiGe HBT structures to achieve simultaneous improvements in thermal and electrical performance is carried out in this study. As a foundation for the study, an thdoi:10.1109/ted.2005.859652 fatcat:gnzghfkkgrdofkbmpghaixo6jq