A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2017; you can also visit the original URL.
The file type is
1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)
Phone: t 8 1-45-770-3693, Fax: t 81-45-770-3578, Email: mat suzawa@ amc. t os hi b a. co . j p We present the implementation and simulated results of a practical model to cover Schottky and Ohmic contacts. The model considers thermionic emission and the spatially distributed tunneling. Simulations using the present model reproduce characteristics of Schottky barrier diodes and show the transition from Schottky to ohmic as the doping level is increased. As an application example, the immunity ofdoi:10.1109/iwce.1998.742737 fatcat:yzctt4w475bt3ggsen22kzcrjq