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Numerical Analysis of the Incident ion Energy and Angle Distribution in the DC Magnetron Sputtering for the Variation of Gas Pressure
Applied Science and Convergence Technology
The ion energy and angle distributions (IEADs) in the DC magnetron sputtering systems are investigated for the variation of gas pressure using particle-in-cell simulation. Even for the condition of collisionless ion sheath at low pressure, it is possible to change the IEAD significantly with the change of gas pressure. The bombarding ions to the target with low energy and large incident angle are observed at low pressure when the sheath voltage drop is low. It is because the electron transportdoi:10.5757/asct.2018.27.1.19 fatcat:abusqdjcljd6zpzm43itscvczm