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The electronic properties of doped single walled carbon nanotubes and carbon nanotube sensors
2014
Condensed Matter Physics
We present ab initio calculations on the band structure and density of states of single wall semiconducting carbon nanotubes with high degrees (up to 25 B, Si and N substitution. The doping process consists of two phases: different carbon nanotubes (CNTs) for a constant doping rate and different doping rates for the zigzag (8, 0) carbon nanotube. We analyze the doping dependence of nanotubes on the doping rate and the nanotube type. Using these results, we select the zigzag (8, 0) carbon
doi:10.5488/cmp.17.43301
fatcat:z67zsgbrzvdypfiec6remn3bba