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Physics-based electro-thermal Saber model and parameter extraction for high-voltage SiC buffer-layer IGBTs
2014
2014 IEEE Energy Conversion Congress and Exposition (ECCE)
The purpose of this paper is to present a physicsbased electro-thermal Saber®* model and parameter extraction sequence for high-voltage SiC buffer layer nchannel insulated gate bipolar transistors (IGBTs). This model was developed by modifying and extending the previously developed physics-based silicon buffer layer IGBT electrothermal model and IGBT Model Parameter extrACtion Tools (IMPACT) to include SiC specific device and material properties. The validated simulation results in this paper
doi:10.1109/ecce.2014.6953430
fatcat:g7a3mjxp3bbwzdgd5cirdekfre