Physics-based electro-thermal Saber model and parameter extraction for high-voltage SiC buffer-layer IGBTs

T. H. Duong, A. R. Hefner, J. M. Ortiz-Rodriguez, S.-H. Ryu, Edward Van Brunt, Lin Cheng, Scott Allen, John W. Palmour
2014 2014 IEEE Energy Conversion Congress and Exposition (ECCE)  
The purpose of this paper is to present a physicsbased electro-thermal Saber®* model and parameter extraction sequence for high-voltage SiC buffer layer nchannel insulated gate bipolar transistors (IGBTs). This model was developed by modifying and extending the previously developed physics-based silicon buffer layer IGBT electrothermal model and IGBT Model Parameter extrACtion Tools (IMPACT) to include SiC specific device and material properties. The validated simulation results in this paper
more » ... monstrate that the new electro-thermal Saber® model for high-voltage SiC buffer layer n-channel IGBTs can be used to describe the static and dynamic behaviors for a wide range of device designs and circuit conditions for IGBTs with blocking voltages from 12 kV to 20 kV. The new physics-based model provides both device and circuit predictive capability. I. 978-1-4799-5776-7/14/$31.00 ©2014 IEEE
doi:10.1109/ecce.2014.6953430 fatcat:g7a3mjxp3bbwzdgd5cirdekfre