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InP quantum dots for applications in laser devices and future solid-state quantum gates
Journal of Physics, Conference Series
Single and stacked layers of InP quantum dots in (AlxGa1−x)0.51In0.49P barriers were grown by metal-organic vapor-phase epitaxy for applications in semiconductor laser devices and optical gate structures. An in-plane laser structure with a single layer of InP QDs is presented, emitting at 1.942 eV and exhibiting low threshold current densities of 780 A/cm 2 in electrically pulsed laser operation at 288 K for a 2000 µm long device with uncoated facets. In order to realize an externally drivendoi:10.1088/1742-6596/245/1/012077 fatcat:5l7t6br2ozcyzg2u6ve46jvkym