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Recent advances in studies for InGaN/GaN have led to high-brightness green and blue light emitting diodes (LED). These wide band gap materials are currently used for many applications, for example full color displays, white (RGB) light sources or for the creation of shorter wavelength devices for optical data storage. In this presentation, we will report our observations of intriguing optical instability (blinking phenomenon) in the photoluminescence of InGaN single quantum well devices.doi:10.1063/1.2172144 fatcat:kjg3qyswfbcgxit663t5zebjcu