We report the experimental demonstration of deepsubmicrometer inversion-mode In 0.75 Ga 0.25 As MOSFETs with ALD high-k Al 2 O 3 as gate dielectric. In this letter, n-channel MOSFETs with 100-200-nm-long gates have been fabricated. At a supply voltage of 0.8 V, the fabricated devices with 200-130-nm-long gates exhibit drain currents of 232-440 μA/μm and transconductances of 538-705 μS/μm. The 100-nm device has a drain current of 801 μA/μm and a transconductance of 940 μS/μm. However, the device

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... cannot be pinched off due to severe short-channel effect. Important scaling metrics, such as on/off current ratio, subthreshold swing, and drain-induced barrier lowering, are presented, and their relations to the short-channel effect are discussed. Index Terms-Atomic layer deposition, high-k, InGaAs, MOSFET.