STM characterization of the Si-P heterodimer

N. J. Curson, S. R. Schofield, M. Y. Simmons, L. Oberbeck, J. L. O'Brien, R. G. Clark
2004 Physical Review B  
We use scanning tunneling microscopy (STM) and Auger electron spectroscopy to study the behavior of adsorbed phosphine (PH_3) on Si(001), as a function of annealing temperature, paying particular attention to the formation of the Si-P heterodimer. Dosing the Si(001) surface with ∼0.002 Langmuirs of PH_3 results in the adsorption of PH_x (x=2,3) onto the surface and some etching of Si to form individual Si ad-dimers. Annealing to 350^∘C results in the incorporation of P into the surface layer to
more » ... form Si-P heterodimers and the formation of short 1-dimensional Si dimer chains and monohydrides. In filled state STM images, isolated Si-P heterodimers appear as zig-zag features on the surface due to the static dimer buckling induced by the heterodimer. In the presence of a moderate coverage of monohydrides this static buckling is lifted, rending the Si-P heterodimers invisible in filled state images. However, we find that we can image the heterodimer at all H coverages using empty state imaging. The ability to identify single P atoms incorporated into Si(001) will be invaluable in the development of nanoscale electronic devices based on controlled atomic-scale doping of Si.
doi:10.1103/physrevb.69.195303 fatcat:equ3bowyxzgzxirgz27fmkh6im