Temperature Dependence of the Zero-Bias Conductance in the Graphene NIS Junction

M.M. Wysokiński
2014 Acta Physica Polonica. A  
The temperature dependence of the zero-bias conductance of the graphene-based, ballistic junction composed of the three consecutive regions: normal, with potential barrier (insulating) and superconducting (NIS), is analyzed within the extended BlonderTinkhamKlapwijk approach. Within this approach we have found that oscillatory behavior of the conductance as a function of barrier strength is suppressed by the temperature the amplitude diminishes with heating up the junction. Moreover, the
more » ... oreover, the subtle, although nontrivial feature of the system is reported: the average over the period of the oscillations of the zero-bias conductance for relatively small Fermi level mismatch behaves non-monotonically with the increase of the temperature with the maximum roughly at T /Tc ≈ 0.5.
doi:10.12693/aphyspola.126.a-36 fatcat:w4havq3fovdr3lxryodskbzyzq