Identification of double quantum dots in nanowire devices by single-gate sweeps

Hiroshi Inokawa, Yasuo Takahashi
2016 Proc. 14th Int. Conf. on Global Research and Education, Inter-Academia 2015   unpublished
The drain current-gate voltage characteristics of the double quantum dot devices are classified theoretically based on periodic multiple peaks separated by deep valleys, and are observed experimentally in silicon nanowire devices. Inspired by the unique patterns in the characteristics, delta-literals for multiple-valued logic are proposed as a new application of the double quantum dots.
doi:10.7567/jjapcp.4.011201 fatcat:qhqzlq34mrbdxjip4etz7lsqae