The magneto-Hall difference and the planar extraordinary Hall balance

S. L. Zhang, T. Hesjedal
2016 AIP Advances  
Thickness dependence of parallel and perpendicular anisotropic resistivity in Ta/NiFe/IrMn/Ta multilayer studied by anisotropic magnetoresistance and planar Hall effect Hall effect and magnetic properties of III-V based ( Ga 1−x Mn x ) As/AlAs magnetic semiconductor superlattices The extraordinary Hall balance (EHB) is a general device concept that harnesses the net extraordinary Hall effect (EHE) arising from two independent magnetic layers, which are electrically in parallel. Different EHB
more » ... avior can be achieved by tuning the strength and type of interlayer coupling, i.e., ferromagnetic or antiferromagnetic of varying strength, allowing for logic and memory applications. The physics of the EHE in such a multilayered systems, especially the interface-induced effect, will be discussed. A discrepancy between the magnetization and the Hall effect, called the magneto-Hall difference (MHD) is found, which is not expected in conventional EHE systems. By taking advantage of the MHD effect, and by optimizing the materials structure, magnetoresistance ratios in excess of 40,000% can be achieved at room-temperature. We present a new design, the planar EHB, which has the potential to achieve significantly larger magnetoresistance ratios. C 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license
doi:10.1063/1.4948443 fatcat:cbgi2k2lezfdrlujmbltjdc53u