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Electronic influence of ultrathin aluminum oxide on the transistor device performance of binary indium/tin oxide films
2022
Journal of Materials Chemistry C
Controlled aluminum oxide doping at an atomic level into binary indium/tin oxide thin-films allows control of crucial TFT parameters such as the mobility (μsat), the threshold-voltage (Vth) and on/off ratio (IOn/IOff). Moreover, it stabilizes TFT performance under optical stress.
doi:10.1039/d2tc00285j
fatcat:etiipkjh7resldygc4romq6c6e